IGBT,逆变器/IGBT,Inverter

最大额定值/Maximum Rated Values

ParameterSymbolConditionsValuesUnit 集电极－发射极电压

Collector-emitter voltage

VCES Tvj =25℃1700V 连续集电极直流电流

Continuous DC collector current

IC nom

IC

TC =108℃,Tvj max=175℃

TC =25℃,Tvj max=175℃

600

950

A

A

集电极重复峰值电流

Repetitive peak collector current

ICRM tP =1ms1200A 特征值/Characteristic ValuesMin.Typ.Max.Unit 栅极阈值电压

Gate threshold voltage

VGEth IC =24,0 mA,VCE =VGE,Tvj =25℃5,25,86,4V 栅极电荷

Gate charge

QG VGE =-15V...+15V　6,15　μC 输入电容

Input capacitance

Cies f=1MHz,Tvj =25℃,

VCE =25V,VGE =0V

48,0nF 开通延迟时间(电感负载)

Turn-on delay time, inductive load

td on IC =600A,VCE =900V Tvj =25℃

VGE =±15V Tvj =125℃

RGon =1,0Ω Tvj =150℃

　 0,20

0,21

0,24

μs

μs

μs

结－外壳热阻

Thermal resistance,junction to case

RthJC 每个IGBT/per IGBT　0,0369　K/W 外壳－散热器热阻

Thermal resistance,case to heatsink

RthCH 每个IGBT/per IGBT

λPaste =1W/(m·K)/λgrease =1W/(m·K)

0,033　　K/W 二极管,逆变器/Diode,Inverter

最大额定值/Maximum Rated Values

反向重复峰值电压

Repetitive peak reverse voltage

VRRM Tvj =25℃1700V 连续正向直流电流

Continuous DC forward current

IF　600A 正向重复峰值电流

Repetitive peak forward current

IFRM tP =1ms1200A 特征值/Characteristic ValuesMin.Typ.Max.Unit 正向电压

Forward voltage

VF IF =600A,VGE =0V;Tvj =25℃

IF =600A,VGE =0V;Tvj =125℃

IF =600A,VGE =0V;Tvj =150℃

　 1,80

1,90

1,95

2,20 V

V

V

反向恢复峰值电流

Peak reverse recovery current

IRM IF =600A,-diF/dt=6500A/μs(Tvj =150℃) Tvj =25℃

VR =900V Tvj =125℃

VGE =-15V Tvj =150℃

　 580

650

670

　 A

A

A

恢复电荷

Recovered charge

Qr IF =600A,-diF/dt=6500A/μs(Tvj=150℃) Tvj =25℃

VR =900V Tvj =125℃

VGE =-15V Tvj =150℃

　 150

250

285

　 μC

μC

μc